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231224s2015 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201502239
|2 doi
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|a pubmed24n0837.xml
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|a (DE-627)NLM251341550
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|a (NLM)26222338
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Lee, Won-June
|e verfasserin
|4 aut
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|a Large-Scale Precise Printing of Ultrathin Sol-Gel Oxide Dielectrics for Directly Patterned Solution-Processed Metal Oxide Transistor Arrays
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|c 2015
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 20.11.2015
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Ultrathin and dense metal oxide gate di-electric layers are reported by a simple printing of AlOx and HfOx sol-gel precursors. Large-area printed indium gallium zinc oxide (IGZO) thin-film transistor arrays, which exhibit mobilities >5 cm(2) V(-1) s(-1) and gate leakage current of 10(-9) A cm(-2) at a very low operation voltage of 2 V, are demonstrated by continuous simple bar-coated processes
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|a Journal Article
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|a bar coating
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|a direct patterning
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|a gate dielectrics
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|a sol-gel metal oxides
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|a thin-film transistors
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|a Park, Won-Tae
|e verfasserin
|4 aut
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|a Park, Sungjun
|e verfasserin
|4 aut
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|a Sung, Sujin
|e verfasserin
|4 aut
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|a Noh, Yong-Young
|e verfasserin
|4 aut
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|a Yoon, Myung-Han
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 27(2015), 34 vom: 09. Sept., Seite 5043-8
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:27
|g year:2015
|g number:34
|g day:09
|g month:09
|g pages:5043-8
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|u http://dx.doi.org/10.1002/adma.201502239
|3 Volltext
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