Growth and Etching of Monolayer Hexagonal Boron Nitride

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 33 vom: 02. Sept., Seite 4858-64
1. Verfasser: Wang, Lifeng (VerfasserIn)
Weitere Verfasser: Wu, Bin, Jiang, Lili, Chen, Jisi, Li, Yongtao, Guo, Wei, Hu, Pingan, Liu, Yunqi
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article chemical vapor deposition diffusion growth and etching hexagonal boron nitride
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520 |a The full spectrum from attachment-kinetic-dominated to diffusion-controlled modes is revealed for the cases of monolayer h-BN chemical vapor deposition (CVD) growth and Ar/H2 etching. The sets of grown and etched structures exhibit well-defined shape evolution from Euclidian to fractal geometry. The detailed abnormal processes for merging h-BN flakes into continuous structures or film are first observed and explained 
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700 1 |a Jiang, Lili  |e verfasserin  |4 aut 
700 1 |a Chen, Jisi  |e verfasserin  |4 aut 
700 1 |a Li, Yongtao  |e verfasserin  |4 aut 
700 1 |a Guo, Wei  |e verfasserin  |4 aut 
700 1 |a Hu, Pingan  |e verfasserin  |4 aut 
700 1 |a Liu, Yunqi  |e verfasserin  |4 aut 
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