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231224s2015 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201502116
|2 doi
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|a pubmed24n0836.xml
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|a (NLM)26177598
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|a eng
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|a Honda, Wataru
|e verfasserin
|4 aut
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|a High-performance, mechanically flexible, and vertically integrated 3D carbon nanotube and InGaZnO complementary circuits with a temperature sensor
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|c 2015
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 29.10.2015
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A vertically integrated inorganic-based flexible complementary metal-oxide-semiconductor (CMOS) inverter with a temperature sensor with a high inverter gain of ≈50 and a low power consumption of <7 nW mm(-1) is demonstrated using a layer-by-layer assembly process. In addition, the negligible influence of the mechanical flexibility on the performance of the CMOS inverter and the temperature dependence of the CMOS inverter characteristics are discussed
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|a Journal Article
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|a 3D flexible complementary metal-oxide-semiconductors
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|a InGaZnO
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|a carbon nanotubes
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|a temperature sensors
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|a vertical integrations
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|a Harada, Shingo
|e verfasserin
|4 aut
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|a Ishida, Shohei
|e verfasserin
|4 aut
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|a Arie, Takayuki
|e verfasserin
|4 aut
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|a Akita, Seiji
|e verfasserin
|4 aut
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|a Takei, Kuniharu
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 27(2015), 32 vom: 26. Aug., Seite 4674-80
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:27
|g year:2015
|g number:32
|g day:26
|g month:08
|g pages:4674-80
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|u http://dx.doi.org/10.1002/adma.201502116
|3 Volltext
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