Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2)

Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2)

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 31 vom: 19. Aug., Seite 4640-8
1. Verfasser: Keyshar, Kunttal (VerfasserIn)
Weitere Verfasser: Gong, Yongji, Ye, Gonglan, Brunetto, Gustavo, Zhou, Wu, Cole, Daniel P, Hackenberg, Ken, He, Yongmin, Machado, Leonardo, Kabbani, Mohamad, Hart, Amelia H C, Li, Bo, Galvao, Douglas S, George, Antony, Vajtai, Robert, Tiwary, Chandra Sekhar, Ajayan, Pulickel M
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D materials chemical vapor deposition renium disulfide transition metal dichalcogenides
Beschreibung
Zusammenfassung:© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
The direct synthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field-effect transistor characteristics are evaluated, which highlight the potential in being used as an n-type semiconductor
Beschreibung:Date Completed 23.10.2015
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201501795