Interfacing Solution-Grown C60 and (3-Pyrrolinium)(CdCl3 ) Single Crystals for High-Mobility Transistor-Based Memory Devices

Interfacing Solution-Grown C60 and (3-Pyrrolinium)(CdCl3 ) Single Crystals for High-Mobility Transistor-Based Memory Devices

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 30 vom: 01. Aug., Seite 4476-4480
1. Verfasser: Wu, Jiake (VerfasserIn)
Weitere Verfasser: Fan, Congcheng, Xue, Guobiao, Ye, Tao, Liu, Shuang, Lin, Ruoqian, Chen, Hongzheng, Xin, Huolin L, Xiong, Ren-Gen, Li, Hanying
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article field-effect transistors memory organic electronics single crystals solution processing
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520 |a Aligned ferroelectric single crystals of (3-pyrrolinium)(CdCl3 ) can be prepared from solution on top of aligned semiconducting C60 single crystals using an orthogonal solvent. Memory devices based on these ferroelectric/semiconductor bilayered heterojunctions exhibit much larger hysteresis compared with that of only C60 single crystals. More importantly, the introduction of the ferroelectric layer induces the memory window without dramatically reducing the charge mobility 
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650 4 |a field-effect transistors 
650 4 |a memory 
650 4 |a organic electronics 
650 4 |a single crystals 
650 4 |a solution processing 
700 1 |a Fan, Congcheng  |e verfasserin  |4 aut 
700 1 |a Xue, Guobiao  |e verfasserin  |4 aut 
700 1 |a Ye, Tao  |e verfasserin  |4 aut 
700 1 |a Liu, Shuang  |e verfasserin  |4 aut 
700 1 |a Lin, Ruoqian  |e verfasserin  |4 aut 
700 1 |a Chen, Hongzheng  |e verfasserin  |4 aut 
700 1 |a Xin, Huolin L  |e verfasserin  |4 aut 
700 1 |a Xiong, Ren-Gen  |e verfasserin  |4 aut 
700 1 |a Li, Hanying  |e verfasserin  |4 aut 
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