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231224s2015 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201500268
|2 doi
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|a pubmed24n0831.xml
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|a eng
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|a Zheng, Wei
|e verfasserin
|4 aut
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|a Low-Dimensional Structure Vacuum-Ultraviolet-Sensitive (λ < 200 nm) Photodetector with Fast-Response Speed Based on High-Quality AlN Micro/Nanowire
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|c 2015
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 10.09.2015
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A low-dimensional-structure vacuum-ultraviolet-sensitive photodetector based on high-quality aluminum nitride (AlN) micro-/nanowires is reported. This work, for the first time, demonstrates that a semiconductor nanostructure can be applied in vacuum-ultraviolet (VUV) photon detection and opens a way for developing diminutive, power-saving, and low-cost VUV materials and sensors that can be potentially applied in geospace sciences and solar-terrestrial physics
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|a Journal Article
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|a AlN micro/nanowire
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|a fast responses
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|a low-dimensional photodetectors
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|a vacuum-ultraviolet detection
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|a Huang, Feng
|e verfasserin
|4 aut
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|a Zheng, Ruisheng
|e verfasserin
|4 aut
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|a Wu, Honglei
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 27(2015), 26 vom: 08. Juli, Seite 3921-7
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:27
|g year:2015
|g number:26
|g day:08
|g month:07
|g pages:3921-7
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|u http://dx.doi.org/10.1002/adma.201500268
|3 Volltext
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