Low-Dimensional Structure Vacuum-Ultraviolet-Sensitive (λ < 200 nm) Photodetector with Fast-Response Speed Based on High-Quality AlN Micro/Nanowire

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 26 vom: 08. Juli, Seite 3921-7
1. Verfasser: Zheng, Wei (VerfasserIn)
Weitere Verfasser: Huang, Feng, Zheng, Ruisheng, Wu, Honglei
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article AlN micro/nanowire fast responses low-dimensional photodetectors vacuum-ultraviolet detection
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520 |a A low-dimensional-structure vacuum-ultraviolet-sensitive photodetector based on high-quality aluminum nitride (AlN) micro-/nanowires is reported. This work, for the first time, demonstrates that a semiconductor nanostructure can be applied in vacuum-ultraviolet (VUV) photon detection and opens a way for developing diminutive, power-saving, and low-cost VUV materials and sensors that can be potentially applied in geospace sciences and solar-terrestrial physics 
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650 4 |a AlN micro/nanowire 
650 4 |a fast responses 
650 4 |a low-dimensional photodetectors 
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700 1 |a Huang, Feng  |e verfasserin  |4 aut 
700 1 |a Zheng, Ruisheng  |e verfasserin  |4 aut 
700 1 |a Wu, Honglei  |e verfasserin  |4 aut 
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