High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures

High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures

© 2015 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 25 vom: 01. Juli, Seite 3760-6
1. Verfasser: Mudd, Garry W (VerfasserIn)
Weitere Verfasser: Svatek, Simon A, Hague, Lee, Makarovsky, Oleg, Kudrynskyi, Zakhar R, Mellor, Christopher J, Beton, Peter H, Eaves, Laurence, Novoselov, Kostya S, Kovalyuk, Zakhar D, Vdovin, Evgeny E, Marsden, Alex J, Wilson, Neil R, Patanè, Amalia
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article graphene indium selenide photoconductivity van der Waals crystals
Beschreibung
Zusammenfassung:© 2015 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures is achieved by exploiting the broad-band transparency of graphene, the direct bandgap of InSe, and the favorable band line up of InSe with graphene. The photoresponsivity exceeds that for other van der Waals heterostructures and the spectral response extends from the near-infrared to the visible spectrum
Beschreibung:Date Completed 08.09.2015
Date Revised 25.05.2024
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201500889