Field-effect transistors based on amorphous black phosphorus ultrathin films by pulsed laser deposition

Field-effect transistors based on amorphous black phosphorus ultrathin films by pulsed laser deposition

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 25 vom: 01. Juli, Seite 3748-54
Auteur principal: Yang, Zhibin (Auteur)
Autres auteurs: Hao, Jianhua, Yuan, Shuoguo, Lin, Shenghuang, Yau, Hei Man, Dai, Jiyan, Lau, Shu Ping
Format: Article en ligne
Langue:English
Publié: 2015
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article amorphous ultrathin films black phosphorus field-effect transistors pulsed laser deposition wafer-scale
Description
Résumé:© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Amorphous black phosphorus (a-BP) ultrathin films are deposited by pulsed laser deposition. a-BP field-effect trans-istors, exhibiting high carrier mobility and moderate on/off current ratio, are demonstrated. Thickness dependence of the bandgap, mobility, and on/off ratio are observed. These results offer not only a new nanoscale member in the BP family, but also a new opportunity to develop nano-electronic devices
Description:Date Completed 08.09.2015
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201500990