Highly transparent and stretchable field-effect transistor sensors using graphene-nanowire hybrid nanostructures

Highly transparent and stretchable field-effect transistor sensors using graphene-nanowire hybrid nanostructures

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 21 vom: 03. Juni, Seite 3292-7
1. Verfasser: Kim, Joohee (VerfasserIn)
Weitere Verfasser: Lee, Mi-Sun, Jeon, Sangbin, Kim, Minji, Kim, Sungwon, Kim, Kukjoo, Bien, Franklin, Hong, Sung You, Park, Jang-Ung
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article field-effect transistors graphene hybrid nanowires wearable electronics
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520 |a Transparent and stretchable electronics with remarkable bendability, conformability, and lightness are the key attributes for sensing or wearable devices. Transparent and stretchable field-effect transistor sensors using graphene-metal nanowire hybrid nanostructures have high mobility (≈3000 cm(2) V(-1) s(-1) ) with low contact resistance, and they are transferrable onto a variety of substrates. The integration of these sensors for RLC circuits enables wireless monitoring 
650 4 |a Journal Article 
650 4 |a field-effect transistors 
650 4 |a graphene 
650 4 |a hybrid 
650 4 |a nanowires 
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700 1 |a Lee, Mi-Sun  |e verfasserin  |4 aut 
700 1 |a Jeon, Sangbin  |e verfasserin  |4 aut 
700 1 |a Kim, Minji  |e verfasserin  |4 aut 
700 1 |a Kim, Sungwon  |e verfasserin  |4 aut 
700 1 |a Kim, Kukjoo  |e verfasserin  |4 aut 
700 1 |a Bien, Franklin  |e verfasserin  |4 aut 
700 1 |a Hong, Sung You  |e verfasserin  |4 aut 
700 1 |a Park, Jang-Ung  |e verfasserin  |4 aut 
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