Minimizing Unintentional Strain and Doping of Single-Layer Graphene on SiO2 in Aqueous Environments by Acid Treatments
The effects of treating SiO2/Si with either acidic or alkaline solutions on single-layer graphene were investigated using Raman microscopy. It is well-known that in air graphene on SiO2 is unintentionally strained and hole-doped to different degrees, varying widely by sample. It is also known that v...
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1999. - 31(2015), 17 vom: 05. Mai, Seite 4934-9 |
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| Format: | Online-Aufsatz |
| Sprache: | English |
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2015
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids |
| Schlagworte: | Journal Article |
| Online verfügbar |
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