Large room-temperature electroresistance in dual-modulated ferroelectric tunnel barriers

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 16 vom: 24. Apr., Seite 2602-7
1. Verfasser: Radaelli, Greta (VerfasserIn)
Weitere Verfasser: Gutiérrez, Diego, Sánchez, Florencio, Bertacco, Riccardo, Stengel, Massimiliano, Fontcuberta, Josep
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Schottky barrier depletion width electroresistance ferroelectric tunnel junction
LEADER 01000naa a22002652 4500
001 NLM247131709
003 DE-627
005 20231224144545.0
007 cr uuu---uuuuu
008 231224s2015 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201405117  |2 doi 
028 5 2 |a pubmed24n0823.xml 
035 |a (DE-627)NLM247131709 
035 |a (NLM)25776131 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Radaelli, Greta  |e verfasserin  |4 aut 
245 1 0 |a Large room-temperature electroresistance in dual-modulated ferroelectric tunnel barriers 
264 1 |c 2015 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 16.06.2015 
500 |a Date Revised 01.10.2020 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a Pt/BaTiO3/La0.7Sr0.3MnO3 tunnel junctions, at negative voltage bias, for two polarization directions are represented. It is demonstrated that reversing the polarization direction of a ferroelectric barrier in a tunnel junction leads to a change of junction conductance and capacitance, with concomitant variations on the barrier height and effective thickness, both contributing to produce larger electroresistance 
650 4 |a Journal Article 
650 4 |a Schottky barrier 
650 4 |a depletion width 
650 4 |a electroresistance 
650 4 |a ferroelectric tunnel junction 
700 1 |a Gutiérrez, Diego  |e verfasserin  |4 aut 
700 1 |a Sánchez, Florencio  |e verfasserin  |4 aut 
700 1 |a Bertacco, Riccardo  |e verfasserin  |4 aut 
700 1 |a Stengel, Massimiliano  |e verfasserin  |4 aut 
700 1 |a Fontcuberta, Josep  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 27(2015), 16 vom: 24. Apr., Seite 2602-7  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:27  |g year:2015  |g number:16  |g day:24  |g month:04  |g pages:2602-7 
856 4 0 |u http://dx.doi.org/10.1002/adma.201405117  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 27  |j 2015  |e 16  |b 24  |c 04  |h 2602-7