TiS3 transistors with tailored morphology and electrical properties

TiS3 transistors with tailored morphology and electrical properties

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 16 vom: 24. Apr., Seite 2595-601
1. Verfasser: Island, Joshua O (VerfasserIn)
Weitere Verfasser: Barawi, Mariam, Biele, Robert, Almazán, Adrián, Clamagirand, José M, Ares, José R, Sánchez, Carlos, van der Zant, Herre S J, Álvarez, José V, D'Agosta, Roberto, Ferrer, Isabel J, Castellanos-Gomez, Andres
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article TiS3 density functional theory exfoliation potential field-effect transistors mechanical exfoliation monolayers morphology sulphur vacancy
Beschreibung
Zusammenfassung:© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Control over the morphology of TiS3 is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets, which, according to density functional theory calculations, leads to an n-type doping
Beschreibung:Date Completed 16.06.2015
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201405632