Resistive Switching Memory Devices Based on Proteins

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 46 vom: 09. Dez., Seite 7670-6
1. Verfasser: Wang, Hong (VerfasserIn)
Weitere Verfasser: Meng, Fanben, Zhu, Bowen, Leow, Wan Ru, Liu, Yaqing, Chen, Xiaodong
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't electronic devices memory proteins resistive switching Biocompatible Materials Ions Metals Proteins mehr... Sericins Ferritins 9007-73-2
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520 |a Resistive switching memory constitutes a prospective candidate for next-generation data storage devices. Meanwhile, naturally occurring biomaterials are promising building blocks for a new generation of environmentally friendly, biocompatible, and biodegradable electronic devices. Recent progress in using proteins to construct resistive switching memory devices is highlighted. The protein materials selection, device engineering, and mechanism of such protein-based resistive switching memory are discussed in detail. Finally, the critical challenges associated with protein-based resistive switching memory devices are presented, as well as insights into the future development of resistive switching memory based on natural biomaterials 
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700 1 |a Zhu, Bowen  |e verfasserin  |4 aut 
700 1 |a Leow, Wan Ru  |e verfasserin  |4 aut 
700 1 |a Liu, Yaqing  |e verfasserin  |4 aut 
700 1 |a Chen, Xiaodong  |e verfasserin  |4 aut 
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