Ultra-flexible, "invisible" thin-film transistors enabled by amorphous metal oxide/polymer channel layer blends

Ultra-flexible, "invisible" thin-film transistors enabled by amorphous metal oxide/polymer channel layer blends

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 14 vom: 08. Apr., Seite 2390-9
1. Verfasser: Yu, Xinge (VerfasserIn)
Weitere Verfasser: Zeng, Li, Zhou, Nanjia, Guo, Peijun, Shi, Fengyuan, Buchholz, Donald B, Ma, Q, Yu, Junsheng, Dravid, Vinayak P, Chang, Robert P H, Bedzyk, Michael, Marks, Tobin J, Facchetti, Antonio
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article flexible materials indium oxide polymer blends thin-film transistors transparent electronics
Beschreibung
Zusammenfassung:© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Ultra-flexible and transparent metal oxide transistors are developed by doping In2 O3 films with poly(vinylphenole) (PVP). By adjusting the In2 O3 :PVP weight ratio, crystallization is frustrated, and conducting pathways for efficient charge transport are maintained. In2 O3 :5%PVP-based transistors exhibit mobilities approaching 11 cm(2) V(-1) s(-1) before, and retain up to ca. 90% performance after 100 bending/relaxing cycles at a radius of 10 mm
Beschreibung:Date Completed 04.06.2015
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201405400