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231224s2015 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201404544
|2 doi
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|a pubmed25n0818.xml
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|a (DE-627)NLM245527362
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|a (NLM)25607919
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|a DE-627
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|e rakwb
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|a eng
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|a Park, Steve
|e verfasserin
|4 aut
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|a Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C60 phototransistor
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|c 2015
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 21.05.2015
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A highly sensitive single-walled carbon nanotube/C60 -based infrared photo-transistor is fabricated with a responsivity of 97.5 A W(-1) and detectivity of 1.17 × 10(9) Jones at 1 kHz under a source/drain bias of -0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈10(4) with a response time of several milliseconds
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|a Journal Article
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|a carbon nanotubes
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|a fullerene
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|a photodetectors
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|a transistors
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|a Kim, Soo Jin
|e verfasserin
|4 aut
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1 |
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|a Nam, Ji Hyun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Pitner, Gregory
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Tae Hoon
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ayzner, Alexander L
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Huiliang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Fong, Scott W
|e verfasserin
|4 aut
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|a Vosgueritchian, Michael
|e verfasserin
|4 aut
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| 700 |
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|a Park, Young Jun
|e verfasserin
|4 aut
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|a Brongersma, Mark L
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Bao, Zhenan
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 27(2015), 4 vom: 27. Jan., Seite 759-65
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:27
|g year:2015
|g number:4
|g day:27
|g month:01
|g pages:759-65
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