Controllable n-type doping on CVD-grown single- and double-layer graphene mixture

Controllable n-type doping on CVD-grown single- and double-layer graphene mixture

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 9 vom: 04. März, Seite 1619-23
1. Verfasser: Xu, Wentao (VerfasserIn)
Weitere Verfasser: Wang, Lihua, Liu, Yiwen, Thomas, Simil, Seo, Hong-Kyu, Kim, Kwang-Ik, Kim, Kwang S, Lee, Tae-Woo
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article band gap opening decamethylcobaltocene electrohydrodynamic nanowire lithography graphene work function tuning
Beschreibung
Zusammenfassung:© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
n-Type doping of mixed single- and double-layer graphene grown by chemical vapor deposition (CVD) using decamethyl-cobaltocene reveals a local-quasilinear relationship between the work function and the logarithm of the dopant solution concentration. The relationship that arises from bandgap opening is deduced by comparing the relationship between the two factors for single- or double-layer graphene. This work has extensive applicability and practical significance in doping CVD-grown graphene
Beschreibung:Date Completed 11.05.2015
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201405353