Enhanced performance in fluorene-free organometal halide perovskite light-emitting diodes using tunable, low electron affinity oxide electron injectors

© 2015 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 8 vom: 25. Feb., Seite 1414-9
1. Verfasser: Hoye, Robert L Z (VerfasserIn)
Weitere Verfasser: Chua, Matthew R, Musselman, Kevin P, Li, Guangru, Lai, May-Ling, Tan, Zhi-Kuang, Greenham, Neil C, MacManus-Driscoll, Judith L, Friend, Richard H, Credgington, Dan
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article electron injection barrier tuning perovskite light-emitting diodes polymer light-emitting diodes spatial atmospheric atomic layer deposition zinc magnesium oxide
LEADER 01000naa a22002652 4500
001 NLM245196714
003 DE-627
005 20231224140340.0
007 cr uuu---uuuuu
008 231224s2015 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201405044  |2 doi 
028 5 2 |a pubmed24n0817.xml 
035 |a (DE-627)NLM245196714 
035 |a (NLM)25573086 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Hoye, Robert L Z  |e verfasserin  |4 aut 
245 1 0 |a Enhanced performance in fluorene-free organometal halide perovskite light-emitting diodes using tunable, low electron affinity oxide electron injectors 
264 1 |c 2015 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 15.05.2015 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2015 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a Fluorene-free perovskite light-emitting diodes (LEDs) with low turn-on voltages, higher luminance and sharp, color-pure electroluminescence are obtained by replacing the F8 electron injector with ZnO, which is directly deposited onto the CH3NH3PbBr3 perovskite using spatial atmospheric atomic layer deposition. The electron injection barrier can also be reduced by decreasing the ZnO electron affinity through Mg incorporation, leading to lower turn-on voltages 
650 4 |a Journal Article 
650 4 |a electron injection barrier tuning 
650 4 |a perovskite light-emitting diodes 
650 4 |a polymer light-emitting diodes 
650 4 |a spatial atmospheric atomic layer deposition 
650 4 |a zinc magnesium oxide 
700 1 |a Chua, Matthew R  |e verfasserin  |4 aut 
700 1 |a Musselman, Kevin P  |e verfasserin  |4 aut 
700 1 |a Li, Guangru  |e verfasserin  |4 aut 
700 1 |a Lai, May-Ling  |e verfasserin  |4 aut 
700 1 |a Tan, Zhi-Kuang  |e verfasserin  |4 aut 
700 1 |a Greenham, Neil C  |e verfasserin  |4 aut 
700 1 |a MacManus-Driscoll, Judith L  |e verfasserin  |4 aut 
700 1 |a Friend, Richard H  |e verfasserin  |4 aut 
700 1 |a Credgington, Dan  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 27(2015), 8 vom: 25. Feb., Seite 1414-9  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:27  |g year:2015  |g number:8  |g day:25  |g month:02  |g pages:1414-9 
856 4 0 |u http://dx.doi.org/10.1002/adma.201405044  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 27  |j 2015  |e 8  |b 25  |c 02  |h 1414-9