Seamless stitching of graphene domains on polished copper (111) foil

Détails bibliographiques
Publié dans:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 8 vom: 25. Feb., Seite 1376-82
Auteur principal:	Nguyen, Van Luan (Auteur)
Autres auteurs:	Shin, Bong Gyu, Duong, Dinh Loc, Kim, Sung Tae, Perello, David, Lim, Young Jin, Yuan, Qing Hong, Ding, Feng, Jeong, Hu Young, Shin, Hyeon Suk, Lee, Seung Mi, Chae, Sang Hoon, Vu, Quoc An, Lee, Seung Hee, Lee, Young Hee
Format:	Article en ligne
Langue:	English
Publié:	2015
Accès à la collection:	Advanced materials (Deerfield Beach, Fla.)
Sujets:	Journal Article UV-treatment chemical vapor deposition (CVD) grain boundary graphene growth liquid crystals


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100	1		\|a Nguyen, Van Luan \|e verfasserin \|4 aut
245	1	0	\|a Seamless stitching of graphene domains on polished copper (111) foil
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336			\|a Text \|b txt \|2 rdacontent
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500			\|a Date Completed 15.05.2015
500			\|a Date Revised 30.09.2020
500			\|a published: Print-Electronic
500			\|a Citation Status PubMed-not-MEDLINE
520			\|a © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
520			\|a Seamless stitching of graphene domains on polished copper (111) is proved clearly not only at atomic scale by scanning tunnelling microscopy (STM) and transmission electron micoscopy (TEM), but also at the macroscale by optical microscopy after UV-treatment. Using this concept of seamless stitching, synthesis of 6 cm × 3 cm monocrystalline graphene without grain boundaries on polished copper (111) foil is possible, which is only limited by the chamber size
650		4	\|a Journal Article
650		4	\|a UV-treatment
650		4	\|a chemical vapor deposition (CVD)
650		4	\|a grain boundary
650		4	\|a graphene growth
650		4	\|a liquid crystals
700	1		\|a Shin, Bong Gyu \|e verfasserin \|4 aut
700	1		\|a Duong, Dinh Loc \|e verfasserin \|4 aut
700	1		\|a Kim, Sung Tae \|e verfasserin \|4 aut
700	1		\|a Perello, David \|e verfasserin \|4 aut
700	1		\|a Lim, Young Jin \|e verfasserin \|4 aut
700	1		\|a Yuan, Qing Hong \|e verfasserin \|4 aut
700	1		\|a Ding, Feng \|e verfasserin \|4 aut
700	1		\|a Jeong, Hu Young \|e verfasserin \|4 aut
700	1		\|a Shin, Hyeon Suk \|e verfasserin \|4 aut
700	1		\|a Lee, Seung Mi \|e verfasserin \|4 aut
700	1		\|a Chae, Sang Hoon \|e verfasserin \|4 aut
700	1		\|a Vu, Quoc An \|e verfasserin \|4 aut
700	1		\|a Lee, Seung Hee \|e verfasserin \|4 aut
700	1		\|a Lee, Young Hee \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Advanced materials (Deerfield Beach, Fla.) \|d 1998 \|g 27(2015), 8 vom: 25. Feb., Seite 1376-82 \|w (DE-627)NLM098206397 \|x 1521-4095 \|7 nnas
773	1	8	\|g volume:27 \|g year:2015 \|g number:8 \|g day:25 \|g month:02 \|g pages:1376-82
856	4	0	\|u http://dx.doi.org/10.1002/adma.201404541 \|3 Volltext
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