Switching-on quantum size effects in silicon nanocrystals

Switching-on quantum size effects in silicon nanocrystals

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 4 vom: 27. Jan., Seite 746-9
1. Verfasser: Sun, Wei (VerfasserIn)
Weitere Verfasser: Qian, Chenxi, Wang, Liwei, Wei, Muan, Mastronardi, Melanie L, Casillas, Gilberto, Breu, Josef, Ozin, Geoffrey A
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't quantum size effects silicon monoxide precursors silicon nanocrystals size separation size-dependent photoluminescent absolute quantum yield Silicon Z4152N8IUI
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520 |a The size-dependence of the absolute luminescence quantum yield of size-separated silicon nanocrystals reveals a "volcano" behavior, which switches on around 5 nm, peaks at near 3.7-3.9 nm, and decreases thereafter. These three regions respectively define: i) the transition from bulk to strongly quantum confined emissive silicon, ii) increasing confinement enhancing radiative recombination, and iii) increasing contributions favoring non-radiative recombination 
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650 4 |a Research Support, Non-U.S. Gov't 
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650 4 |a silicon monoxide precursors 
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650 4 |a size separation 
650 4 |a size-dependent photoluminescent absolute quantum yield 
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700 1 |a Qian, Chenxi  |e verfasserin  |4 aut 
700 1 |a Wang, Liwei  |e verfasserin  |4 aut 
700 1 |a Wei, Muan  |e verfasserin  |4 aut 
700 1 |a Mastronardi, Melanie L  |e verfasserin  |4 aut 
700 1 |a Casillas, Gilberto  |e verfasserin  |4 aut 
700 1 |a Breu, Josef  |e verfasserin  |4 aut 
700 1 |a Ozin, Geoffrey A  |e verfasserin  |4 aut 
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