Influence of shell thickness on the performance of light-emitting devices based on CdSe/Zn1-X CdX S core/shell heterostructured quantum dots

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 47 vom: 17. Dez., Seite 8034-40
Auteur principal: Lim, Jaehoon (Auteur)
Autres auteurs: Jeong, Byeong Guk, Park, Myeongjin, Kim, Jai Kyeong, Pietryga, Jeffrey M, Park, Young-Shin, Klimov, Victor I, Lee, Changhee, Lee, Doh C, Bae, Wan Ki
Format: Article en ligne
Langue:English
Publié: 2014
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article charging efficiency roll-off energy transfer light-emitting devices type-I heterostructures
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520 |a CdSe/Zn1-X CdX S core/shell heterostructured quantum dots (QDs) with varying shell thicknesses are studied as the active material in a series of electroluminescent devices. "Giant" CdSe/Zn1-X CdX S QDs (e.g., CdSe core radius of 2 nm and Zn1-X CdX S shell thickness of 6.3 nm) demonstrate a high device efficiency (peak EQE = 7.4%) and a record-high brightness (>100 000 cd m(-2) ) of deep-red emission, along with improved device stability 
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700 1 |a Jeong, Byeong Guk  |e verfasserin  |4 aut 
700 1 |a Park, Myeongjin  |e verfasserin  |4 aut 
700 1 |a Kim, Jai Kyeong  |e verfasserin  |4 aut 
700 1 |a Pietryga, Jeffrey M  |e verfasserin  |4 aut 
700 1 |a Park, Young-Shin  |e verfasserin  |4 aut 
700 1 |a Klimov, Victor I  |e verfasserin  |4 aut 
700 1 |a Lee, Changhee  |e verfasserin  |4 aut 
700 1 |a Lee, Doh C  |e verfasserin  |4 aut 
700 1 |a Bae, Wan Ki  |e verfasserin  |4 aut 
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