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231224s2014 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201403620
|2 doi
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|a pubmed25n0811.xml
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|a (NLM)25381683
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|a DE-627
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|e rakwb
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|a eng
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|a Lim, Jaehoon
|e verfasserin
|4 aut
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|a Influence of shell thickness on the performance of light-emitting devices based on CdSe/Zn1-X CdX S core/shell heterostructured quantum dots
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|c 2014
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 21.05.2015
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a CdSe/Zn1-X CdX S core/shell heterostructured quantum dots (QDs) with varying shell thicknesses are studied as the active material in a series of electroluminescent devices. "Giant" CdSe/Zn1-X CdX S QDs (e.g., CdSe core radius of 2 nm and Zn1-X CdX S shell thickness of 6.3 nm) demonstrate a high device efficiency (peak EQE = 7.4%) and a record-high brightness (>100 000 cd m(-2) ) of deep-red emission, along with improved device stability
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|a Journal Article
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|a charging
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|a efficiency roll-off
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|a energy transfer
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|a light-emitting devices
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|a type-I heterostructures
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|a Jeong, Byeong Guk
|e verfasserin
|4 aut
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|a Park, Myeongjin
|e verfasserin
|4 aut
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|a Kim, Jai Kyeong
|e verfasserin
|4 aut
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|a Pietryga, Jeffrey M
|e verfasserin
|4 aut
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|a Park, Young-Shin
|e verfasserin
|4 aut
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|a Klimov, Victor I
|e verfasserin
|4 aut
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|a Lee, Changhee
|e verfasserin
|4 aut
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|a Lee, Doh C
|e verfasserin
|4 aut
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|a Bae, Wan Ki
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 26(2014), 47 vom: 17. Dez., Seite 8034-40
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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|g volume:26
|g year:2014
|g number:47
|g day:17
|g month:12
|g pages:8034-40
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|u http://dx.doi.org/10.1002/adma.201403620
|3 Volltext
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