Interface atomic-scale structure and its impact on quantum electron transport
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| Publié dans: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 21(2009), 48 vom: 28. Dez., Seite 4966-4969 |
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| Auteur principal: | |
| Autres auteurs: | , , |
| Format: | Article en ligne |
| Langue: | English |
| Publié: |
2009
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| Accès à la collection: | Advanced materials (Deerfield Beach, Fla.) |
| Sujets: | Journal Article Atomic-scale structures Interfaces Quantum electron transport Schottky barrier Structure-property relationships |
| Résumé: | Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Local structure, chemistry, and bonding at interfaces often radically affect the properties of materials. A combination of scanning transmission electron microscopy and density functional theory calculations reveals an atomic layer of carbon at a SiC/Ti3 SiC2 interface in Ohmic contact to p-type SiC, which results in stronger adhesion, a lowered Schottky barrier, and enhanced transport. This is a key factor to understanding the origin of the Ohmic nature |
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| Description: | Date Completed 08.11.2014 Date Revised 01.10.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.200900877 |