Single-crystal C60 needle/CuPc nanoparticle double floating-gate for low-voltage organic transistors based non-volatile memory devices

Single-crystal C60 needle/CuPc nanoparticle double floating-gate for low-voltage organic transistors based non-volatile memory devices

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 1 vom: 07. Jan., Seite 27-33
Auteur principal: Chang, Hsuan-Chun (Auteur)
Autres auteurs: Lu, Chien, Liu, Cheng-Liang, Chen, Wen-Chang
Format: Article en ligne
Langue:English
Publié: 2015
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article C60 ambipolar trapping floating-gate non-volatile memory transistors
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520 |a Low-voltage organic field-effect transistor memory devices exhibiting a wide memory window, low power consumption, acceptable retention, endurance properties, and tunable memory performance are fabricated. The performance is achieved by employing single-crystal C60 needles and copper phthalocyanine nanoparticles to produce an ambipolar (hole/electron) trapping effect in a double floating-gate architecture 
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700 1 |a Chen, Wen-Chang  |e verfasserin  |4 aut 
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