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231224s2014 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201403196
|2 doi
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|a pubmed24n0807.xml
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|a (NLM)25243356
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|a DE-627
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|a eng
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|a Kim, Haena
|e verfasserin
|4 aut
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|a Doping graphene with an atomically thin two dimensional molecular layer
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|c 2014
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 21.05.2015
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Atomically thin and chemically versatile GO sheets are used as p-type dopants of CVD-graphene. This method enables the strong, stable, large-scale, low-temperature, and controllable p-doping of graphene with preserved charge mobility, intrinsic roughness, and transmittance
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|a Journal Article
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|a field effect transistor
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|a graphene
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|a graphene oxide
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|a molecular doping
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|a transparent conductive electrodes
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|a Kim, Hyun Ho
|e verfasserin
|4 aut
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|a Jang, Jeong In
|e verfasserin
|4 aut
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|a Lee, Seong Kyu
|e verfasserin
|4 aut
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|a Lee, Geon-Woong
|e verfasserin
|4 aut
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|a Han, Joong Tark
|e verfasserin
|4 aut
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|a Cho, Kilwon
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 26(2014), 48 vom: 23. Dez., Seite 8141-6
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:26
|g year:2014
|g number:48
|g day:23
|g month:12
|g pages:8141-6
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|u http://dx.doi.org/10.1002/adma.201403196
|3 Volltext
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