Self-assembled monolayers of cyclohexyl-terminated phosphonic acids as a general dielectric surface for high-performance organic thin-film transistors

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 42 vom: 12. Nov., Seite 7190-6
1. Verfasser: Liu, Danqing (VerfasserIn)
Weitere Verfasser: He, Zikai, Su, Yaorong, Diao, Ying, Mannsfeld, Stefan C B, Bao, Zhenan, Xu, Jianbin, Miao, Qian
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't interface engineering organic thin-film transistors self-assembled monolayers (SAMs) Phosphorous Acids titanium dioxide 15FIX9V2JP Titanium D1JT611TNE mehr... Aluminum Oxide LMI26O6933
LEADER 01000naa a22002652 4500
001 NLM241753589
003 DE-627
005 20231224124930.0
007 cr uuu---uuuuu
008 231224s2014 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201402822  |2 doi 
028 5 2 |a pubmed24n0805.xml 
035 |a (DE-627)NLM241753589 
035 |a (NLM)25205623 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Liu, Danqing  |e verfasserin  |4 aut 
245 1 0 |a Self-assembled monolayers of cyclohexyl-terminated phosphonic acids as a general dielectric surface for high-performance organic thin-film transistors 
264 1 |c 2014 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 17.07.2015 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status MEDLINE 
520 |a © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a A novel self-assembled monolayer (SAM) on AlOy /TiOx is terminated with cyclohexyl groups, an unprecedented terminal group for all kinds of SAMs. The SAM-modified AlOy /TiOx functions as a general dielectric, enabling organic thin-film transistors with a field-effect mobility higher than 5 cm(2) V(-1) s(-1) for both holes and electrons, good air stability with low operating voltage, and general applicability to solution-processed and vacuum-deposited n-type and p-type organic semiconductors 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
650 4 |a interface engineering 
650 4 |a organic thin-film transistors 
650 4 |a self-assembled monolayers (SAMs) 
650 7 |a Phosphorous Acids  |2 NLM 
650 7 |a titanium dioxide  |2 NLM 
650 7 |a 15FIX9V2JP  |2 NLM 
650 7 |a Titanium  |2 NLM 
650 7 |a D1JT611TNE  |2 NLM 
650 7 |a Aluminum Oxide  |2 NLM 
650 7 |a LMI26O6933  |2 NLM 
700 1 |a He, Zikai  |e verfasserin  |4 aut 
700 1 |a Su, Yaorong  |e verfasserin  |4 aut 
700 1 |a Diao, Ying  |e verfasserin  |4 aut 
700 1 |a Mannsfeld, Stefan C B  |e verfasserin  |4 aut 
700 1 |a Bao, Zhenan  |e verfasserin  |4 aut 
700 1 |a Xu, Jianbin  |e verfasserin  |4 aut 
700 1 |a Miao, Qian  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 26(2014), 42 vom: 12. Nov., Seite 7190-6  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:26  |g year:2014  |g number:42  |g day:12  |g month:11  |g pages:7190-6 
856 4 0 |u http://dx.doi.org/10.1002/adma.201402822  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 26  |j 2014  |e 42  |b 12  |c 11  |h 7190-6