Charge-trap flash-memory oxide transistors enabled by copper-zirconia composites

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 42 vom: 12. Nov., Seite 7170-7
1. Verfasser: Baeg, Kang-Jun (VerfasserIn)
Weitere Verfasser: Kim, Myung-Gil, Song, Charles K, Yu, Xinge, Facchetti, Antonio, Marks, Tobin J
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article amorphous oxides data storage dielectrics self-assembly semiconductors thin films
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520 |a A solution-processed electrochemical charge-trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu-ZrO2) as a charge-trapping layer. Because of the facile reduction of Cu(2+) to Cu(1+), Cu-ZrO2 thin films are especially effective in memory devices based on thin-film transistors when the devices are fabricated from combustion-processed metal-oxide semiconductors (In2O3 and an indium-gallium oxide) 
650 4 |a Journal Article 
650 4 |a amorphous oxides 
650 4 |a data storage 
650 4 |a dielectrics 
650 4 |a self-assembly 
650 4 |a semiconductors 
650 4 |a thin films 
700 1 |a Kim, Myung-Gil  |e verfasserin  |4 aut 
700 1 |a Song, Charles K  |e verfasserin  |4 aut 
700 1 |a Yu, Xinge  |e verfasserin  |4 aut 
700 1 |a Facchetti, Antonio  |e verfasserin  |4 aut 
700 1 |a Marks, Tobin J  |e verfasserin  |4 aut 
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