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231224s2014 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201402472
|2 doi
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|a pubmed24n0805.xml
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|a (DE-627)NLM241703441
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|a (NLM)25200396
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Kim, Seungjun
|e verfasserin
|4 aut
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|a Flexible crossbar-structured resistive memory arrays on plastic substrates via inorganic-based laser lift-off
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|c 2014
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 28.07.2015
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Crossbar-structured memory comprising 32 × 32 arrays with one selector-one resistor (1S-1R) components are initially fabricated on a rigid substrate. They are transferred without mechanical damage via an inorganic-based laser lift-off (ILLO) process as a result of laser-material interaction. Addressing tests of the transferred memory arrays are successfully performed to verify mitigation of cross-talk on a plastic substrate
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a RRAM
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|a flexible electronics
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|a flexible memory
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|a laser lift-off
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|a Plastics
|2 NLM
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|a titanium dioxide
|2 NLM
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|a 15FIX9V2JP
|2 NLM
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|a Nickel
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|a 7OV03QG267
|2 NLM
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|a nickel monoxide
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|a C3574QBZ3Y
|2 NLM
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|a Titanium
|2 NLM
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|a D1JT611TNE
|2 NLM
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| 700 |
1 |
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|a Son, Jung Hwan
|e verfasserin
|4 aut
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1 |
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|a Lee, Seung Hyun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a You, Byoung Kuk
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Park, Kwi-Il
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Hwan Keon
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Byun, Myunghwan
|e verfasserin
|4 aut
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| 700 |
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|a Lee, Keon Jae
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 26(2014), 44 vom: 26. Nov., Seite 7480-7
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:26
|g year:2014
|g number:44
|g day:26
|g month:11
|g pages:7480-7
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|u http://dx.doi.org/10.1002/adma.201402472
|3 Volltext
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