High efficiency Cu2ZnSn(S,Se)4 solar cells by applying a double In2S3/CdS emitter

High efficiency Cu2ZnSn(S,Se)4 solar cells by applying a double In2S3/CdS emitter

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 44 vom: 26. Nov., Seite 7427-31
1. Verfasser: Kim, Jeehwan (VerfasserIn)
Weitere Verfasser: Hiroi, Homare, Todorov, Teodor K, Gunawan, Oki, Kuwahara, Masaru, Gokmen, Tayfun, Nair, Dhruv, Hopstaken, Marinus, Shin, Byungha, Lee, Yun Seog, Wang, Wei, Sugimoto, Hiroki, Mitzi, David B
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article CZTSSe doping concentration double emitter indium sulfide solar cells
Beschreibung
Zusammenfassung:© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
High-efficiency Cu2ZnSn(S,Se)4 solar cells are reported by applying In2S3/CdS double emitters. This new structure offers a high doping concentration within the Cu2ZnSn(S,Se)4 solar cells, resulting in a substantial enhancement in open-circuit voltage. The 12.4% device is obtained with a record open-circuit voltage deficit of 593 mV
Beschreibung:Date Completed 21.05.2015
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201402373