A new benchmark capacitance for supercapacitor anodes by mixed-valence sulfur-doped V6O(13-x)

A new benchmark capacitance for supercapacitor anodes by mixed-valence sulfur-doped V6O(13-x)

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 33 vom: 03. Sept., Seite 5869-75
1. Verfasser: Zhai, Teng (VerfasserIn)
Weitere Verfasser: Lu, Xihong, Ling, Yichuan, Yu, Minghao, Wang, Gongming, Liu, Tianyu, Liang, Chaolun, Tong, Yexiang, Li, Yat
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. anode mixed-valence sulfur doping supercapacitors vanadium oxide
LEADER 01000naa a22002652 4500
001 NLM240586360
003 DE-627
005 20231224122425.0
007 cr uuu---uuuuu
008 231224s2014 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201402041  |2 doi 
028 5 2 |a pubmed24n0802.xml 
035 |a (DE-627)NLM240586360 
035 |a (NLM)25080307 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Zhai, Teng  |e verfasserin  |4 aut 
245 1 2 |a A new benchmark capacitance for supercapacitor anodes by mixed-valence sulfur-doped V6O(13-x) 
264 1 |c 2014 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 12.05.2015 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a A new pseudocapacitor anode, sulfur-doped V6O(13-x), is reported. It achieves a benchmark capacitance of 1353 F/g (0.72 F/cm(2)) at a current density of 1.9 A/g (1 mA/cm(2)) in 5 M LiCl solution. The charges are stored chemically in the electrode via reversible redox reactions that involve multiple oxidation states of vanadium (V(3+), V(4+) and V(5+)) 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
650 4 |a Research Support, U.S. Gov't, Non-P.H.S. 
650 4 |a anode 
650 4 |a mixed-valence 
650 4 |a sulfur doping 
650 4 |a supercapacitors 
650 4 |a vanadium oxide 
700 1 |a Lu, Xihong  |e verfasserin  |4 aut 
700 1 |a Ling, Yichuan  |e verfasserin  |4 aut 
700 1 |a Yu, Minghao  |e verfasserin  |4 aut 
700 1 |a Wang, Gongming  |e verfasserin  |4 aut 
700 1 |a Liu, Tianyu  |e verfasserin  |4 aut 
700 1 |a Liang, Chaolun  |e verfasserin  |4 aut 
700 1 |a Tong, Yexiang  |e verfasserin  |4 aut 
700 1 |a Li, Yat  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 26(2014), 33 vom: 03. Sept., Seite 5869-75  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:26  |g year:2014  |g number:33  |g day:03  |g month:09  |g pages:5869-75 
856 4 0 |u http://dx.doi.org/10.1002/adma.201402041  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 26  |j 2014  |e 33  |b 03  |c 09  |h 5869-75