A universal method for preparation of noble metal nanoparticle-decorated transition metal dichalcogenide nanobelts

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 36 vom: 11. Sept., Seite 6250-4
1. Verfasser: Hong, Xun (VerfasserIn)
Weitere Verfasser: Liu, Juqing, Zheng, Bing, Huang, Xiao, Zhang, Xiao, Tan, Chaoliang, Chen, Junze, Fan, Zhanxi, Zhang, Hua
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't MoS2 memory devices nanobelts nanosheets noble metal nanoparticles transition metal dichalcogenides
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520 |a MoS2, TaS2, TiS2, WSe2 and TaSe2 nanobelts decorated with a PtAg alloy or Pt NPs have been successfully synthesized by etching 2D nanosheets under a mild reaction condition followed by a subsequent nanosheet-to-nanobelt transformation mediated by the PVP template. The PtAg-MoS2 hybrid nanobelt coated with PVP is used as the active material in a memory device, which exhibits hysteresis behavior with the function of dynamic random access memory 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
650 4 |a MoS2 
650 4 |a memory devices 
650 4 |a nanobelts 
650 4 |a nanosheets 
650 4 |a noble metal nanoparticles 
650 4 |a transition metal dichalcogenides 
700 1 |a Liu, Juqing  |e verfasserin  |4 aut 
700 1 |a Zheng, Bing  |e verfasserin  |4 aut 
700 1 |a Huang, Xiao  |e verfasserin  |4 aut 
700 1 |a Zhang, Xiao  |e verfasserin  |4 aut 
700 1 |a Tan, Chaoliang  |e verfasserin  |4 aut 
700 1 |a Chen, Junze  |e verfasserin  |4 aut 
700 1 |a Fan, Zhanxi  |e verfasserin  |4 aut 
700 1 |a Zhang, Hua  |e verfasserin  |4 aut 
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