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231224s2014 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201401250
|2 doi
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|a pubmed24n0795.xml
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|a eng
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|a Ko, Dong-Kyun
|e verfasserin
|4 aut
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|a p-i-n Heterojunction solar cells with a colloidal quantum-dot absorber layer
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|c 2014
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 11.05.2015
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A quantum-dot (QD) p-i-n heterojunction solar cell with an increased depletion region is demonstrated by depleting the QD layer from both the front and back junctions. Due to a combination of improved charged extraction and increased light absorption, a 120% increase in the short-circuit current is achieved compared with that of conventional ZnO/QD devices
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Research Support, U.S. Gov't, Non-P.H.S.
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|a depletion region
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|a lead selenide
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|a p-i-n heterojunctions
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|a quantum dot solar cells
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|a Brown, Patrick R
|e verfasserin
|4 aut
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|a Bawendi, Moungi G
|e verfasserin
|4 aut
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|a Bulović, Vladimir
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 26(2014), 28 vom: 23. Juli, Seite 4845-50
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|7 nnns
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|g volume:26
|g year:2014
|g number:28
|g day:23
|g month:07
|g pages:4845-50
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|u http://dx.doi.org/10.1002/adma.201401250
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