Transparent, low-power pressure sensor matrix based on coplanar-gate graphene transistors

Transparent, low-power pressure sensor matrix based on coplanar-gate graphene transistors

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 27 vom: 16. Juli, Seite 4735-40
1. Verfasser: Sun, Qijun (VerfasserIn)
Weitere Verfasser: Kim, Do Hwan, Park, Sang Sik, Lee, Nae Yoon, Zhang, Yu, Lee, Jung Heon, Cho, Kilwon, Cho, Jeong Ho
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't coplanar gate graphene transistor electronic skin low power pressure sensors active matrix transparency Graphite 7782-42-5
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520 |a A novel device architecture for preparing a transparent and low-voltage graphene pressure-sensor matrix on plastic and rubber substrates is demonstrated. The coplanar gate configuration of the graphene transistor enables a simplified procedure. The resulting devices exhibit excellent device performance, including a high transparency of ca. 80% in the visible range, a low operating voltage less than 2 V, a high pressure sensitivity of 0.12 kPa(-1) , and excellent mechanical durability over 2500 cycles 
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650 4 |a Research Support, Non-U.S. Gov't 
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650 4 |a electronic skin 
650 4 |a low power 
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700 1 |a Kim, Do Hwan  |e verfasserin  |4 aut 
700 1 |a Park, Sang Sik  |e verfasserin  |4 aut 
700 1 |a Lee, Nae Yoon  |e verfasserin  |4 aut 
700 1 |a Zhang, Yu  |e verfasserin  |4 aut 
700 1 |a Lee, Jung Heon  |e verfasserin  |4 aut 
700 1 |a Cho, Kilwon  |e verfasserin  |4 aut 
700 1 |a Cho, Jeong Ho  |e verfasserin  |4 aut 
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