Isothermal switching and detailed filament evolution in memristive systems

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 26 vom: 09. Juli, Seite 4486-90
1. Verfasser: Mickel, Patrick R (VerfasserIn)
Weitere Verfasser: Lohn, Andrew J, James, Conrad D, Marinella, Matthew J
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. RRAM conducting filament memristive systems memristors resistive switching
LEADER 01000naa a22002652 4500
001 NLM237819554
003 DE-627
005 20231224112450.0
007 cr uuu---uuuuu
008 231224s2014 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201306182  |2 doi 
028 5 2 |a pubmed24n0792.xml 
035 |a (DE-627)NLM237819554 
035 |a (NLM)24782402 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Mickel, Patrick R  |e verfasserin  |4 aut 
245 1 0 |a Isothermal switching and detailed filament evolution in memristive systems 
264 1 |c 2014 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 12.05.2015 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a The steady-state solution of filamentary memristive switching may be derived directly from the heat equation, modelling vertical and radial heat flow. This solution is shown to provide a continuous and accurate description of the evolution of the filament radius, composition, heat flow, and temperature during switching, and is shown to apply to a large range of switching materials and experimental time-scales 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
650 4 |a Research Support, U.S. Gov't, Non-P.H.S. 
650 4 |a RRAM 
650 4 |a conducting filament 
650 4 |a memristive systems 
650 4 |a memristors 
650 4 |a resistive switching 
700 1 |a Lohn, Andrew J  |e verfasserin  |4 aut 
700 1 |a James, Conrad D  |e verfasserin  |4 aut 
700 1 |a Marinella, Matthew J  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 26(2014), 26 vom: 09. Juli, Seite 4486-90  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:26  |g year:2014  |g number:26  |g day:09  |g month:07  |g pages:4486-90 
856 4 0 |u http://dx.doi.org/10.1002/adma.201306182  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 26  |j 2014  |e 26  |b 09  |c 07  |h 4486-90