Rationally designed single-crystalline nanowire networks

Rationally designed single-crystalline nanowire networks

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 28 vom: 23. Juli, Seite 4875-9
1. Verfasser: Car, Diana (VerfasserIn)
Weitere Verfasser: Wang, Jia, Verheijen, Marcel A, Bakkers, Erik P A M, Plissard, Sébastien R
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't InSb growth mechanisms nanocrosses nanowires networks
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520 |a Rational bottom-up assembly of nanowire networks may be a way to successfully continue the miniaturization in the semiconductor industry. A generic method is developed that ensures InSb nanowires meet under the optimal angle for the formation of single-crystalline structures, which represents a promising platform for the future random access memories based on Majorana fermions 
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650 4 |a growth mechanisms 
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650 4 |a nanowires 
650 4 |a networks 
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700 1 |a Verheijen, Marcel A  |e verfasserin  |4 aut 
700 1 |a Bakkers, Erik P A M  |e verfasserin  |4 aut 
700 1 |a Plissard, Sébastien R  |e verfasserin  |4 aut 
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