Rationally designed single-crystalline nanowire networks

Rationally designed single-crystalline nanowire networks

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 28 vom: 23. Juli, Seite 4875-9
Auteur principal: Car, Diana (Auteur)
Autres auteurs: Wang, Jia, Verheijen, Marcel A, Bakkers, Erik P A M, Plissard, Sébastien R
Format: Article en ligne
Langue:English
Publié: 2014
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article Research Support, Non-U.S. Gov't InSb growth mechanisms nanocrosses nanowires networks
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520 |a Rational bottom-up assembly of nanowire networks may be a way to successfully continue the miniaturization in the semiconductor industry. A generic method is developed that ensures InSb nanowires meet under the optimal angle for the formation of single-crystalline structures, which represents a promising platform for the future random access memories based on Majorana fermions 
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700 1 |a Plissard, Sébastien R  |e verfasserin  |4 aut 
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