Inkjet printing short-channel polymer transistors with high-performance and ultrahigh photoresponsivity

Inkjet printing short-channel polymer transistors with high-performance and ultrahigh photoresponsivity

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 27 vom: 16. Juli, Seite 4683-9
1. Verfasser: Wang, Hanlin (VerfasserIn)
Weitere Verfasser: Cheng, Cheng, Zhang, Lei, Liu, Hongtao, Zhao, Yan, Guo, Yunlong, Hu, Wenping, Yu, Gui, Liu, Yunqi
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't inkjet printing lithography-free photodetectors short-channel transistors Silicon Dioxide 7631-86-9 Polymethyl Methacrylate 9011-14-7
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520 |a Inkjet-printed short-channel polymer transistors exhibit a high performance (μavg = 1.20 cm(2) V(-1) s(-1) ). With a 50 μm orifice nozzle, polymer transistors with a sub-micrometer (700 nm) channel length are mass-fabricated with good uniformity and reproducibility. In addition, owing to the device geometry, an ultrahigh photoresponsivity up to 10(6) A W(-1) is achieved, which realizes economical, lithography-free photodetectors 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
650 4 |a inkjet printing 
650 4 |a lithography-free 
650 4 |a photodetectors 
650 4 |a short-channel transistors 
650 7 |a Silicon Dioxide  |2 NLM 
650 7 |a 7631-86-9  |2 NLM 
650 7 |a Polymethyl Methacrylate  |2 NLM 
650 7 |a 9011-14-7  |2 NLM 
700 1 |a Cheng, Cheng  |e verfasserin  |4 aut 
700 1 |a Zhang, Lei  |e verfasserin  |4 aut 
700 1 |a Liu, Hongtao  |e verfasserin  |4 aut 
700 1 |a Zhao, Yan  |e verfasserin  |4 aut 
700 1 |a Guo, Yunlong  |e verfasserin  |4 aut 
700 1 |a Hu, Wenping  |e verfasserin  |4 aut 
700 1 |a Yu, Gui  |e verfasserin  |4 aut 
700 1 |a Liu, Yunqi  |e verfasserin  |4 aut 
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