Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation

Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 18 vom: 24. Mai, Seite 2794-9
Auteur principal: Sevilla, Galo A Torres (Auteur)
Autres auteurs: Rojas, Jhonathan P, Fahad, Hossain M, Hussain, Aftab M, Ghanem, Rawan, Smith, Casey E, Hussain, Muhammad M
Format: Article en ligne
Langue:English
Publié: 2014
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article Research Support, Non-U.S. Gov't FinFET brain-architecture inspired computation flexible silicon transparent
Description
Résumé:© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
An industry standard 8'' silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor
Description:Date Completed 17.04.2015
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201305309