25th anniversary article microstructure dependent bias stability of organic transistors

25th anniversary article : microstructure dependent bias stability of organic transistors

Recent studies of the bias-stress-driven electrical instability of organic field-effect transistors (OFETs) are reviewed. OFETs are operated under continuous gate and source/drain biases and these bias stresses degrade device performance. The principles underlying this bias instability are discussed...

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Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 11 vom: 19. März, Seite 1660-80
1. Verfasser: Lee, Wi Hyoung (VerfasserIn)
Weitere Verfasser: Choi, Hyun Ho, Kim, Do Hwan, Cho, Kilwon
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't