Fundamental limitations for electroluminescence in organic dual-gate field-effect transistors

Fundamental limitations for electroluminescence in organic dual-gate field-effect transistors

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 26 vom: 09. Juli, Seite 4450-5
Auteur principal: Roelofs, W S Christian (Auteur)
Autres auteurs: Spijkman, Mark-Jan, Mathijssen, Simon G J, Janssen, René A J, de Leeuw, Dago M, Kemerink, Martijn
Format: Article en ligne
Langue:English
Publié: 2014
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article Research Support, Non-U.S. Gov't ambipolar diketopyrrolopyrrole dual-gate lasing organic light-emitting field-effect transistor
Description
Résumé:© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A dual-gate organic field-effect transistor is investigated for electrically pumped lasing. The two gates can independently accumulate electrons and holes, yielding current densities exceeding the lasing threshold. Here, the aim is to force the electrons and holes to recombine by confining the charges in a single semiconducting film. It is found that independent hole and electron accumulation is mutually exclusive with vertical recombination and light emission
Description:Date Completed 12.05.2015
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201305215