25th anniversary article : semiconductor nanowires--synthesis, characterization, and applications

Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 14 vom: 09. Apr., Seite 2137-84
1. Verfasser: Dasgupta, Neil P (VerfasserIn)
Weitere Verfasser: Sun, Jianwei, Liu, Chong, Brittman, Sarah, Andrews, Sean C, Lim, Jongwoo, Gao, Hanwei, Yan, Ruoxue, Yang, Peidong
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, U.S. Gov't, Non-P.H.S. Review NEMS bio-nano interface electronics energy energy storage nanostructure nanowires mehr... photoelectrochemistry photonics photovoltaic synthesis thermoelectric
LEADER 01000naa a22002652 4500
001 NLM236174983
003 DE-627
005 20231224105014.0
007 cr uuu---uuuuu
008 231224s2014 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201305929  |2 doi 
028 5 2 |a pubmed24n0787.xml 
035 |a (DE-627)NLM236174983 
035 |a (NLM)24604701 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Dasgupta, Neil P  |e verfasserin  |4 aut 
245 1 0 |a 25th anniversary article  |b semiconductor nanowires--synthesis, characterization, and applications 
264 1 |c 2014 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 28.11.2014 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status MEDLINE 
520 |a Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a Semiconductor nanowires (NWs) have been studied extensively for over two decades for their novel electronic, photonic, thermal, electrochemical and mechanical properties. This comprehensive review article summarizes major advances in the synthesis, characterization, and application of these materials in the past decade. Developments in the understanding of the fundamental principles of "bottom-up" growth mechanisms are presented, with an emphasis on rational control of the morphology, stoichiometry, and crystal structure of the materials. This is followed by a discussion of the application of nanowires in i) electronic, ii) sensor, iii) photonic, iv) thermoelectric, v) photovoltaic, vi) photoelectrochemical, vii) battery, viii) mechanical, and ix) biological applications. Throughout the discussion, a detailed explanation of the unique properties associated with the one-dimensional nanowire geometry will be presented, and the benefits of these properties for the various applications will be highlighted. The review concludes with a brief perspective on future research directions, and remaining barriers which must be overcome for the successful commercial application of these technologies 
650 4 |a Journal Article 
650 4 |a Research Support, U.S. Gov't, Non-P.H.S. 
650 4 |a Review 
650 4 |a NEMS 
650 4 |a bio-nano interface 
650 4 |a electronics 
650 4 |a energy 
650 4 |a energy storage 
650 4 |a nanostructure 
650 4 |a nanowires 
650 4 |a photoelectrochemistry 
650 4 |a photonics 
650 4 |a photovoltaic 
650 4 |a synthesis 
650 4 |a thermoelectric 
700 1 |a Sun, Jianwei  |e verfasserin  |4 aut 
700 1 |a Liu, Chong  |e verfasserin  |4 aut 
700 1 |a Brittman, Sarah  |e verfasserin  |4 aut 
700 1 |a Andrews, Sean C  |e verfasserin  |4 aut 
700 1 |a Lim, Jongwoo  |e verfasserin  |4 aut 
700 1 |a Gao, Hanwei  |e verfasserin  |4 aut 
700 1 |a Yan, Ruoxue  |e verfasserin  |4 aut 
700 1 |a Yang, Peidong  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 26(2014), 14 vom: 09. Apr., Seite 2137-84  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:26  |g year:2014  |g number:14  |g day:09  |g month:04  |g pages:2137-84 
856 4 0 |u http://dx.doi.org/10.1002/adma.201305929  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 26  |j 2014  |e 14  |b 09  |c 04  |h 2137-84