Determination of polarization-fields across polytype interfaces in InAs nanopillars

Determination of polarization-fields across polytype interfaces in InAs nanopillars

© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 7 vom: 18. Feb., Seite 1052-7
1. Verfasser: Li, Luying (VerfasserIn)
Weitere Verfasser: Gan, Zhaofeng, McCartney, Martha R, Liang, Hanshuang, Yu, Hongbin, Yin, Wan-Jian, Yan, Yanfa, Gao, Yihua, Wang, Jianbo, Smith, David J
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. InAs nanopillars off-axis electron holography polytype heterocrystalline structures probe-corrected HAADF imaging spontaneous polarization
Beschreibung
Zusammenfassung:© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Polarization fields within InAs nanopillars with zincblende(ZB)/wurtzite(WZ) polytype stacking are quantified. The displacement of charged ions inside individual tetrahedra of WZ regions is measured at the atomic scale. The variations of spontaneous polarization along the interface normal are related to strain at interfaces of different polytypes. Thus, direct correlation between local atomic structure and electric properties is demonstrated
Beschreibung:Date Completed 06.10.2014
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201304021