High-density silicon nanowires prepared via a two-step template method

High density ordered Si nanowire arrays can be fabricated from a Fe2O3 template annealed from polystyrene (PS) microsphere layers via a metal-assisted chemical etching method. The metal mesh films, containing position- and density-defined pores that determine the position and density of the remainin...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1985. - 30(2014), 8 vom: 04. März, Seite 2259-65
1. Verfasser: Teng, Dayong (VerfasserIn)
Weitere Verfasser: Wu, Luo, He, Weiwei, Ye, Changhui
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article
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520 |a High density ordered Si nanowire arrays can be fabricated from a Fe2O3 template annealed from polystyrene (PS) microsphere layers via a metal-assisted chemical etching method. The metal mesh films, containing position- and density-defined pores that determine the position and density of the remaining structures after etching, are extremely important for achieving high quality Si nanowires. By adding a structural inversion process, a Au metal mesh with arrays of high density nanopores is devised as a catalyst for metal-assisted chemical etching of silicon. The density of Si nanowires can be increased to two times that of the single-layer PS microspheres and further to three times when a double layer of PS microspheres is introduced. The two-step template method for the preparation of high-density Si nanowires shows great potential in the fields of nanofabrication and nanoelectronics 
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700 1 |a He, Weiwei  |e verfasserin  |4 aut 
700 1 |a Ye, Changhui  |e verfasserin  |4 aut 
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