High-mobility field-effect transistors fabricated with macroscopic aligned semiconducting polymers

High-mobility field-effect transistors fabricated with macroscopic aligned semiconducting polymers

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 19 vom: 21. Mai, Seite 2993-8
1. Verfasser: Tseng, Hsin-Rong (VerfasserIn)
Weitere Verfasser: Phan, Hung, Luo, Chan, Wang, Ming, Perez, Louis A, Patel, Shrayesh N, Ying, Lei, Kramer, Edward J, Nguyen, Thuc-Quyen, Bazan, Guillermo C, Heeger, Alan J
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. conjugated polymer fiber alignment high mobility intrachain charge transport organic field-effect transistor
Beschreibung
Zusammenfassung:© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A record high OFET hole mobility, as high as 23.7 cm(2) /Vs, is achieved in macroscopic aligned semiconducting polymers. The high mobility is insensitive to the polymer molecular weight. Polymer chains are aligned along the fiber to facilitate intrachain charge transport
Beschreibung:Date Completed 20.04.2015
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201305084