In situ chemical functionalization of gallium nitride with phosphonic acid derivatives during etching
In situ functionalization of polar (c plane) and nonpolar (a plane) gallium nitride (GaN) was performed by adding (3-bromopropyl) phosphonic acid or propyl phosphonic acid to a phosphoric acid etch. The target was to modulate the emission properties and oxide formation of GaN, which was explored thr...
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Bibliographische Detailangaben
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1992. - 30(2014), 8 vom: 04. März, Seite 2038-46
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| 1. Verfasser: |
Wilkins, Stewart J
(VerfasserIn) |
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| Weitere Verfasser: |
Greenough, Michelle,
Arellano, Consuelo,
Paskova, Tania,
Ivanisevic, Albena |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2014
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids
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| Schlagworte: | Journal Article
Research Support, U.S. Gov't, Non-P.H.S.
Membranes, Artificial
Phosphorous Acids
phosphonic acid
13598-36-2
gallium nitride
1R9CC3P9VL
gallium oxide
46F059V66A
mehr...
Gallium
CH46OC8YV4 |
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