Charge density dependent two-channel conduction in organic electric double layer transistors (EDLTs)

Charge density dependent two-channel conduction in organic electric double layer transistors (EDLTs)

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 16 vom: 23. Apr., Seite 2527-32
1. Verfasser: Xie, Wei (VerfasserIn)
Weitere Verfasser: Liu, Feilong, Shi, Sha, Ruden, P Paul, Frisbie, C Daniel
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. conductivity peak effective medium approximation electric double layer transistors (EDLTs) electrolyte gating traps
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520 |a A transport model based on hole-density-dependent trapping is proposed to explain the two unusual conductivity peaks at surface hole densities above 10(13) cm(-2) in rubrene electric double layer transistors (EDLTs). Hole transport in rubrene is described to occur via multiple percolation pathways, where conduction is dominated by transport in the free-site channel at low hole density, and in the trap-site channel at larger hole density 
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650 4 |a Research Support, Non-U.S. Gov't 
650 4 |a Research Support, U.S. Gov't, Non-P.H.S. 
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650 4 |a electrolyte gating 
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700 1 |a Shi, Sha  |e verfasserin  |4 aut 
700 1 |a Ruden, P Paul  |e verfasserin  |4 aut 
700 1 |a Frisbie, C Daniel  |e verfasserin  |4 aut 
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