Split-gate organic field-effect transistors for high-speed operation

Split-gate organic field-effect transistors for high-speed operation

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 19 vom: 21. Mai, Seite 2983-8
1. Verfasser: Uemura, T (VerfasserIn)
Weitere Verfasser: Matsumoto, T, Miyake, K, Uno, M, Ohnishi, S, Kato, T, Katayama, M, Shinamura, S, Hamada, M, Kang, M-J, Takimiya, K, Mitsui, C, Okamoto, T, Takeya, J
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't contact resistance organic electronics organic field-effect transistors
LEADER 01000caa a22002652 4500
001 NLM234855932
003 DE-627
005 20250216144943.0
007 cr uuu---uuuuu
008 231224s2014 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201304976  |2 doi 
028 5 2 |a pubmed25n0782.xml 
035 |a (DE-627)NLM234855932 
035 |a (NLM)24464678 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Uemura, T  |e verfasserin  |4 aut 
245 1 0 |a Split-gate organic field-effect transistors for high-speed operation 
264 1 |c 2014 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 20.04.2015 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a Split-gate organic field-effect transistors have been developed for high-speed operation. Owing to the combination of reduced contact resistance and minimized parasitic capacitance, the devices have fast switching characteristics. The cutoff frequencies for the vacuum-evaporated devices and the solution-processed devices are 20 and 10 MHz, respectively. A speed of 10 MHz is the fastest device reported so far among solution-processed organic transistors 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
650 4 |a contact resistance 
650 4 |a organic electronics 
650 4 |a organic field-effect transistors 
700 1 |a Matsumoto, T  |e verfasserin  |4 aut 
700 1 |a Miyake, K  |e verfasserin  |4 aut 
700 1 |a Uno, M  |e verfasserin  |4 aut 
700 1 |a Ohnishi, S  |e verfasserin  |4 aut 
700 1 |a Kato, T  |e verfasserin  |4 aut 
700 1 |a Katayama, M  |e verfasserin  |4 aut 
700 1 |a Shinamura, S  |e verfasserin  |4 aut 
700 1 |a Hamada, M  |e verfasserin  |4 aut 
700 1 |a Kang, M-J  |e verfasserin  |4 aut 
700 1 |a Takimiya, K  |e verfasserin  |4 aut 
700 1 |a Mitsui, C  |e verfasserin  |4 aut 
700 1 |a Okamoto, T  |e verfasserin  |4 aut 
700 1 |a Takeya, J  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 26(2014), 19 vom: 21. Mai, Seite 2983-8  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:26  |g year:2014  |g number:19  |g day:21  |g month:05  |g pages:2983-8 
856 4 0 |u http://dx.doi.org/10.1002/adma.201304976  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 26  |j 2014  |e 19  |b 21  |c 05  |h 2983-8