Epitaxial growth of molecular crystals on van der waals substrates for high-performance organic electronics

Epitaxial growth of molecular crystals on van der waals substrates for high-performance organic electronics

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 18 vom: 17. Mai, Seite 2812-7
1. Verfasser: Lee, Chul-Ho (VerfasserIn)
Weitere Verfasser: Schiros, Theanne, Santos, Elton J G, Kim, Bumjung, Yager, Kevin G, Kang, Seok Ju, Lee, Sunwoo, Yu, Jaeeun, Watanabe, Kenji, Taniguchi, Takashi, Hone, James, Kaxiras, Efthimios, Nuckolls, Colin, Kim, Philip
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. hexagonal boron nitride (h-BN) organic semiconductors,organic field-effect transistors rubrene van der Waals heterostructures
Beschreibung
Zusammenfassung:© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Epitaxial van der Waals (vdW) heterostructures of organic and layered materials are demonstrated to create high-performance organic electronic devices. High-quality rubrene films with large single-crystalline domains are grown on h-BN dielectric layers via vdW epitaxy. In addition, high carrier mobility comparable to free-standing single-crystal counterparts is achieved by forming interfacial electrical contacts with graphene electrodes
Beschreibung:Date Completed 17.04.2015
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201304973