Critical factors to achieve low voltage- and capacitance-based organic field-effect transistors

Critical factors to achieve low voltage- and capacitance-based organic field-effect transistors

© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 2 vom: 15. Jan., Seite 288-92
1. Verfasser: Jang, Mi (VerfasserIn)
Weitere Verfasser: Park, Ji Hoon, Im, Seongil, Kim, Se Hyun, Yang, Hoichang
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't conjugation low-voltage operation organic field-effect transistors pentacene trap triethylsilylethynyl anthradithiophene (TES-ADT)
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520 |a Hydrophobic organo-compatible but low-capacitance dielectrics (10.5 nFcm(-2) ), polystyrene-grafted SiO2 could induce surface-mediated large crystal grains of face-to-face stacked triethylsilylethynyl anthradithiophene (TES-ADT), producing more efficient charge-carrier transport, in comparison to μm-sized pentacene crystals containing a face-to-edge packing. Low-voltage operating TES-ADT OFETs showed good device performance (μFET ≈ 1.3 cm(2) V(-1) s(-1) , Vth ≈ 0.5 V, SS ≈ 0.2 V), as well as excellent device reliability 
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700 1 |a Park, Ji Hoon  |e verfasserin  |4 aut 
700 1 |a Im, Seongil  |e verfasserin  |4 aut 
700 1 |a Kim, Se Hyun  |e verfasserin  |4 aut 
700 1 |a Yang, Hoichang  |e verfasserin  |4 aut 
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