Scanning transmission X-ray microscopy probe for in situ mechanism study of graphene-oxide-based resistive random access memory

Here, an in situ probe for scanning transmission X-ray microscopy (STXM) has been developed and applied to the study of the bipolar resistive switching (BRS) mechanism in an Al/graphene oxide (GO)/Al resistive random access memory (RRAM) device. To perform in situ STXM studies at the C K- and O K-ed...

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Publié dans:	Journal of synchrotron radiation. - 1994. - 21(2014), Pt 1 vom: 15. Jan., Seite 170-6
Auteur principal:	Nho, Hyun Woo (Auteur)
Autres auteurs:	Kim, Jong Yun, Wang, Jian, Shin, Hyun-Joon, Choi, Sung-Yool, Yoon, Tae Hyun
Format:	Article en ligne
Langue:	English
Publié:	2014
Accès à la collection:	Journal of synchrotron radiation
Sujets:	Journal Article Research Support, Non-U.S. Gov't GO-RRAM STXM bipolar resistive switching mechanism graphene oxide in situ oxygen ion drift model scanning transmission X-ray microscopy Molecular Probes plus... Oxides Graphite 7782-42-5