Activated solutions enabling low-temperature processing of functional ferroelectric oxides for flexible electronics

© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 9 vom: 05. März, Seite 1405-9
Auteur principal: Bretos, Iñigo (Auteur)
Autres auteurs: Jiménez, Ricardo, Wu, Aiying, Kingon, Angus I, Vilarinho, Paula M, Calzada, M Lourdes
Format: Article en ligne
Langue:English
Publié: 2014
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article Research Support, Non-U.S. Gov't ferroelectrics flexible electronics functional oxides low-temperature thin films
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520 |a Functional ferroelectric oxides for flexible electronics are achieved from activated solutions enabling low-temperature processing and large-area deposition directly on polymeric substrates. This processing technology reaches the lower limit temperature of crystallization at 300 °C, using a strategy that combines seeded diphasic precursors and photochemical solution deposition. Properties of these materials are comparable to those of high-temperature-processed counterparts and organic ferroelectrics 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
650 4 |a ferroelectrics 
650 4 |a flexible electronics 
650 4 |a functional oxides 
650 4 |a low-temperature 
650 4 |a thin films 
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700 1 |a Wu, Aiying  |e verfasserin  |4 aut 
700 1 |a Kingon, Angus I  |e verfasserin  |4 aut 
700 1 |a Vilarinho, Paula M  |e verfasserin  |4 aut 
700 1 |a Calzada, M Lourdes  |e verfasserin  |4 aut 
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