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231224s2014    xx |||||o     00| ||eng c | 
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|a 10.1002/adma.201304308 
  |2 doi 
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|a eng 
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1 | 
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|a Bretos, Iñigo 
  |e verfasserin 
  |4 aut 
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| 245 | 
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|a Activated solutions enabling low-temperature processing of functional ferroelectric oxides for flexible electronics 
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|c 2014 
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| 336 | 
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|a Text 
  |b txt 
  |2 rdacontent 
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|a ƒaComputermedien 
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|a ƒa Online-Ressource 
  |b cr 
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|a Date Completed 24.11.2014 
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|a Date Revised 30.09.2020 
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|a published: Print-Electronic 
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|a Citation Status PubMed-not-MEDLINE 
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|a © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
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|a Functional ferroelectric oxides for flexible electronics are achieved from activated solutions enabling low-temperature processing and large-area deposition directly on polymeric substrates. This processing technology reaches the lower limit temperature of crystallization at 300 °C, using a strategy that combines seeded diphasic precursors and photochemical solution deposition. Properties of these materials are comparable to those of high-temperature-processed counterparts and organic ferroelectrics 
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|a Journal Article 
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|a Research Support, Non-U.S. Gov't 
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|a ferroelectrics 
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| 650 | 
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|a flexible electronics 
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| 650 | 
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|a functional oxides 
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| 650 | 
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|a low-temperature 
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| 650 | 
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4 | 
|a thin films 
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| 700 | 
1 | 
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|a Jiménez, Ricardo 
  |e verfasserin 
  |4 aut 
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| 700 | 
1 | 
  | 
|a Wu, Aiying 
  |e verfasserin 
  |4 aut 
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| 700 | 
1 | 
  | 
|a Kingon, Angus I 
  |e verfasserin 
  |4 aut 
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| 700 | 
1 | 
  | 
|a Vilarinho, Paula M 
  |e verfasserin 
  |4 aut 
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| 700 | 
1 | 
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|a Calzada, M Lourdes 
  |e verfasserin 
  |4 aut 
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| 773 | 
0 | 
8 | 
|i Enthalten in 
  |t Advanced materials (Deerfield Beach, Fla.) 
  |d 1998 
  |g 26(2014), 9 vom: 05. März, Seite 1405-9 
  |w (DE-627)NLM098206397 
  |x 1521-4095 
  |7 nnas 
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| 773 | 
1 | 
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|g volume:26 
  |g year:2014 
  |g number:9 
  |g day:05 
  |g month:03 
  |g pages:1405-9 
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|u http://dx.doi.org/10.1002/adma.201304308 
  |3 Volltext 
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|d 26 
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