Fabrication of highly transparent and conductive indium-tin oxide thin films with a high figure of merit via solution processing
Deposition technology of transparent conducting oxide (TCO) thin films is critical for high performance of optoelectronic devices. Solution-based fabrication methods can result in substantial cost reduction and enable broad applicability of the TCO thin films. Here we report a simple and highly effe...
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1985. - 29(2013), 45 vom: 12. Nov., Seite 13836-42 |
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| Weitere Verfasser: | , , , , |
| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2013
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids |
| Schlagworte: | Journal Article |
| Zusammenfassung: | Deposition technology of transparent conducting oxide (TCO) thin films is critical for high performance of optoelectronic devices. Solution-based fabrication methods can result in substantial cost reduction and enable broad applicability of the TCO thin films. Here we report a simple and highly effective solution process to fabricate indium-tin oxide (ITO) thin films with high uniformity, reproducibility, and scalability. The ITO films are highly transparent (90.2%) and conductive (ρ = 7.2 × 10(-4) Ω·cm) with the highest figure of merit (1.19 × 10(-2) Ω(-1)) among all the solution-processed ITO films reported to date. The high transparency and figure of merit, low sheet resistance (30 Ω/sq), and roughness (1.14 nm) are comparable with the benchmark properties of dc sputtering and can meet the requirements for most practical applications |
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| Beschreibung: | Date Completed 11.06.2014 Date Revised 12.11.2013 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1520-5827 |
| DOI: | 10.1021/la4033282 |