Solvent additive to achieve highly ordered nanostructural semicrystalline DPP copolymers toward a high charge carrier mobility

Solvent additive to achieve highly ordered nanostructural semicrystalline DPP copolymers : toward a high charge carrier mobility

© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 48 vom: 23. Dez., Seite 7003-9
1. Verfasser: An, Tae Kyu (VerfasserIn)
Weitere Verfasser: Kang, Il, Yun, Hui-jun, Cha, Hyojung, Hwang, Jihun, Park, Seonuk, Kim, Jiye, Kim, Yu Jin, Chung, Dae Sung, Kwon, Soon-Ki, Kim, Yun-Hi, Park, Chan Eon
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't additive effects evaporation rates high boiling points organic field-effect transistors spin-coating
LEADER 01000naa a22002652 4500
001 NLM231599609
003 DE-627
005 20231224091120.0
007 cr uuu---uuuuu
008 231224s2013 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201301438  |2 doi 
028 5 2 |a pubmed24n0772.xml 
035 |a (DE-627)NLM231599609 
035 |a (NLM)24115273 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a An, Tae Kyu  |e verfasserin  |4 aut 
245 1 0 |a Solvent additive to achieve highly ordered nanostructural semicrystalline DPP copolymers  |b toward a high charge carrier mobility 
264 1 |c 2013 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 04.08.2014 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a A facile spin-coating method in which a small percentage of the solvent additive, 1-chloronaphthalene (CN), is found to increase the drying time during film deposition, is reported. The field-effect mobility of a PDPPDBTE film cast from a chloroform-CN mixed solution is 0.46 cm(2) V(-1) s(-1). The addition of CN to the chloroform solution facilitates the formation of highly crystalline polymer structures 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
650 4 |a additive effects 
650 4 |a evaporation rates 
650 4 |a high boiling points 
650 4 |a organic field-effect transistors 
650 4 |a spin-coating 
700 1 |a Kang, Il  |e verfasserin  |4 aut 
700 1 |a Yun, Hui-jun  |e verfasserin  |4 aut 
700 1 |a Cha, Hyojung  |e verfasserin  |4 aut 
700 1 |a Hwang, Jihun  |e verfasserin  |4 aut 
700 1 |a Park, Seonuk  |e verfasserin  |4 aut 
700 1 |a Kim, Jiye  |e verfasserin  |4 aut 
700 1 |a Kim, Yu Jin  |e verfasserin  |4 aut 
700 1 |a Chung, Dae Sung  |e verfasserin  |4 aut 
700 1 |a Kwon, Soon-Ki  |e verfasserin  |4 aut 
700 1 |a Kim, Yun-Hi  |e verfasserin  |4 aut 
700 1 |a Park, Chan Eon  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 25(2013), 48 vom: 23. Dez., Seite 7003-9  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:25  |g year:2013  |g number:48  |g day:23  |g month:12  |g pages:7003-9 
856 4 0 |u http://dx.doi.org/10.1002/adma.201301438  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 25  |j 2013  |e 48  |b 23  |c 12  |h 7003-9